Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings

摘要

A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications.